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200V
67A
APT20M38BVFR
APT20M38SVFR
0.038
APT20M38BVFRG* APT20M38SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
BVFR D3PAK
TO-247
POWER MOS V (R)
FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SVFR
* Lower Leakage * Faster Switching
* Avalanche Energy Rated * Fast Recovery Body Diode
G
D
* TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
S
All Ratings: TC = 25C unless otherwise specified.
APT20M38B_SVFR(G) UNIT Volts Amps
200 67 268 30 40 370 2.96 -55 to 150 300 67 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
200 67 0.038 250 1000 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A
3-2006 050-5602 Rev D
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M38B_SVFR(G)
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF
5100 1145 390 148 47 75 14 21 48 10
6120 1600 585 225 75 110 28 42 75 20
ns nC
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
67 268 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s)
240 420 1 2 10 16
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.34 40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 0.58mH, R = 25, Peak I = 67A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt
VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05
PDM
3-2006
0.01 0.005
0.02 0.01 SINGLE PULSE
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5602 Rev D
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
150
ID, DRAIN CURRENT (AMPERES)
VGS=10V & 15V
ID, DRAIN CURRENT (AMPERES)
150
APT20M38B_SVFR(G)
VGS=15V 10V
120 6.5V
7V
120
7V 6.5V 6V
90
90
6V 60 5.5V 30 4.5V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 5V
60 5.5V 30 4.5V 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
150
ID, DRAIN CURRENT (AMPERES)
TJ = -55C TJ = +25C TJ = +125C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.3
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
120
1.2
90
1.1
VGS=10V
60 TJ = +125C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 70 0 TJ = -55C
1.0 VGS=20V
30
0.9
0.8
0
40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
60 50 40 30 20 10 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.5
I = 0.5 I [Cont.]
D D
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V
GS
= 10V
2.0
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5602 Rev D
3-2006
APT20M38B_SVFR(G)
300
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
C, CAPACITANCE (pF)
15,000 10,000 Ciss 5,000 Coss Crss
100 50
1mS
10 5 TC =+25C TJ =+150C SINGLE PULSE
1,000 500
10mS 100mS DC
1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
100
20
I = I [Cont.]
D D
300
16
VDS=40V VDS=100V
100 50
TJ =+150C
TJ =+25C
12
VDS=160V
8
10 5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-247 (BVFR) Package Outline
e1 SAC: Tin, Silver, Copper
D PAK (SVFR) Package Outline
e3 100% Sn
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05(.632)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
3-2006
0.40 (.016) 0.79 (.031)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
050-5602 Rev D
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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